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SI4936CDY-T1-GE3
Dual MOSFET, N Channel, 30 V, 5.8 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4936CDY-T1-GE3Copy
Order Code
Re-Reel1779274RL
Cut Tape1779274
Your Part Number
4,561 In Stock
15,000 more incoming. You can reserve stock now
4,561 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.480 | CNY32.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.480 (CNY7.3224) |
| 50+ | CNY5.410 (CNY6.1133) |
| 100+ | CNY4.330 (CNY4.8929) |
| 500+ | CNY3.440 (CNY3.8872) |
| 1000+ | CNY3.040 (CNY3.4352) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4936CDY-T1-GE3Copy
Order Code
Re-Reel1779274RL
Cut Tape1779274
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.3W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI4936CDY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for low current DC-to-DC conversion and notebook system power applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000154