Print Page
SI4816BDY-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-GE3Copy
Order Code
Re-Reel2101479RL
Cut Tape2101479
Your Part Number
1,385 In Stock
Need more?
1,385 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY20.390 | CNY20.39 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY20.390 (CNY23.0407) |
| 10+ | CNY12.650 (CNY14.2945) |
| 100+ | CNY8.960 (CNY10.1248) |
| 500+ | CNY7.170 (CNY8.1021) |
| 1000+ | CNY6.200 (CNY7.006) |
| 5000+ | CNY6.180 (CNY6.9834) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-GE3Copy
Order Code
Re-Reel2101479RL
Cut Tape2101479
Technical Datasheet
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel5.8A
Drain Source On State Resistance N Channel0.0155ohm
Drain Source On State Resistance P Channel0.0155ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI4816BDY-T1-GE3 is a dual N-channel MOSFET with Schottky diode housed in a surface-mount package.
- Halogen-free
- LITTLE FOOT® Plus power MOSFET
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance P Channel
0.0155ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
0.0155ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SI4816BDY-T1-GE3
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000301