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SI4435FDY-T1-GE3
Power MOSFET, P Channel, 30 V, 12.6 A, 0.019 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4435FDY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Order Code
Re-Reel3470708RL
Cut Tape3470708
Product RangeTrenchFET III
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY3.700 | CNY18.50 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.700 (CNY4.181) |
| 50+ | CNY3.050 (CNY3.4465) |
| 100+ | CNY2.390 (CNY2.7007) |
| 500+ | CNY1.810 (CNY2.0453) |
| 1000+ | CNY1.640 (CNY1.8532) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4435FDY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Order Code
Re-Reel3470708RL
Cut Tape3470708
Product RangeTrenchFET III
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12.6A
Drain Source On State Resistance0.019ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation4.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET III
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
SI4435FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET. Typical applications include adapter switch, load switch, DC/DC converters, high speed switching, power management in battery-operated, mobile and wearable devices.
- TrenchFET® Gen III p-channel power MOSFET
- 100% Rg tested
- Drain-source breakdown voltage is -30V min at VGS = 0V, ID = -250μA, TJ = 25°C
- Gate-source leakage is ±100nA max at VDS = 0V, VGS = ±20V, TJ = 25°C
- Drain-source on-state resistance is 0.015ohm typ at VGS = -10V, ID = -9A, TJ = 25°C
- Total gate charge is 28nC typ at VDS = -15V, VGS = -10V, ID = -5A, TJ = 25°C
- Continuous source-drain diode current is -4A max ta TC = 25°C
- Body diode reverse recovery time is 20ns typ at IF = -5A, dI/dt = 100A/μs, TJ = 25°C
- SO-8 package
- Operating junction and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
12.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET III
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129