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SI4288DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 9.2 A, 9.2 A, 0.0165 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4288DY-T1-GE3Copy
Order Code
Full Reel3879344
Re-Reel2056718RL
Cut Tape2056718
Your Part Number
5,000 In Stock
Need more?
5,000 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY10.900 | CNY54.50 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY10.900 (CNY12.317) |
| 50+ | CNY9.120 (CNY10.3056) |
| 100+ | CNY7.340 (CNY8.2942) |
| 500+ | CNY5.950 (CNY6.7235) |
| 1000+ | CNY5.330 (CNY6.0229) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 2500+ | CNY5.220 (CNY5.8986) |
| 7500+ | CNY5.120 (CNY5.7856) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4288DY-T1-GE3Copy
Order Code
Full Reel3879344
Re-Reel2056718RL
Cut Tape2056718
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel9.2A
Continuous Drain Current Id P Channel9.2A
Drain Source On State Resistance N Channel0.0165ohm
Drain Source On State Resistance P Channel0.0165ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
The SI4288DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for CCFL inverter, DC-to-DC converter and HDD applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
9.2A
Drain Source On State Resistance P Channel
0.0165ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
9.2A
Drain Source On State Resistance N Channel
0.0165ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726