Print Page
Image is for illustrative purposes only. Please refer to product description.

22,207 In Stock
Need more?
22207 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.800 (CNY6.554) |
| 10+ | CNY3.610 (CNY4.0793) |
| 100+ | CNY2.320 (CNY2.6216) |
| 500+ | CNY1.770 (CNY2.0001) |
| 1000+ | CNY1.370 (CNY1.5481) |
| 5000+ | CNY1.090 (CNY1.2317) |
Price for:Each
Minimum: 5
Multiple: 5
CNY29.00 (CNY32.77 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3
Order Code2335284
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.112ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch.
- TrenchFET® Power MOSFET
- Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to 1V (VDS = VGS, ID = - 250µA, TJ = 25°C)
- Continuous drain current is - 3.1A (TJ = 150 °C, TC = 25°C)
- Pulsed drain current is -10A (TA = 25°C)
- Continuous source-drain diode current is -1.3A (TC = 25°C, TA = 25°C)
- Maximum power dissipation is 1.6W (TC = 25°C, TA = 25°C)
- VDS temperature coefficient is -18mV/°C typ (ID = - 250µA, TJ = 25°C)
- Forward transconductance is 9.5S typ (VDS = - 5V, ID = - 2.8A, TJ = 25°C)
- SOT-23 package, operating junction temperature range from -55 to 150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
2.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.112ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for SI2301CDS-T1-E3
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00005
