Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerVISHAY
Manufacturer Part NoIRL630PBF..Copy
Manufacturer Standard Lead Time28 weeks
Order Code2396084
Your Part Number
17 In Stock
Need more?
17 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY17.610 (CNY19.8993) |
| 10+ | CNY12.230 (CNY13.8199) |
| 100+ | CNY8.730 (CNY9.8649) |
| 500+ | CNY6.740 (CNY7.6162) |
| 1000+ | CNY5.420 (CNY6.1246) |
| 5000+ | CNY4.570 (CNY5.1641) |
Price for:Each
Minimum: 1
Multiple: 1
CNY17.61 (CNY19.90 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRL630PBF..Copy
Manufacturer Standard Lead Time28 weeks
Order Code2396084
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Alternatives for IRL630PBF..
1 Product Found
Product Overview
The IRL630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- -55 to 150°C Operating temperature range
- Repetitive avalanche rated
- Logic-level gate drive
- Ease of paralleling
- RDS (ON) Specified at VGS = 4 and 5V
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
5V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002042
