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SSM6N57NU,LF(T
Dual MOSFET, N Channel, 30 V, 30 V, 4 A, 4 A, 0.03 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N57NU,LF(T
Order Code
Re-Reel3872306RL
Cut Tape3872306
Also Known AsSSM6N57NU ,SSM6N57NU,LF
Your Part Number
45 In Stock
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45 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY3.560 | CNY17.80 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.560 (CNY4.0228) |
| 10+ | CNY2.280 (CNY2.5764) |
| 100+ | CNY1.760 (CNY1.9888) |
| 500+ | CNY1.490 (CNY1.6837) |
| 1000+ | CNY1.130 (CNY1.2769) |
| 5000+ | CNY0.889 (CNY1.0046) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N57NU,LF(T
Order Code
Re-Reel3872306RL
Cut Tape3872306
Also Known AsSSM6N57NU ,SSM6N57NU,LF
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id4A
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.03ohm
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.03ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.03ohm
Transistor Case StyleSOT-1118
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd1W
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.03ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1W
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.03ohm
Drain Source On State Resistance N Channel
0.03ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-1118
No. of Pins
6Pins
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045