Print Page
STD150N3LLH6
Power MOSFET, N Channel, 30 V, 80 A, 2400 µohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD150N3LLH6Copy
Order Code
Re-Reel3367017RL
Cut Tape3367017
Product RangeSTripFET VI DeepGATE
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD150N3LLH6Copy
Order Code
Re-Reel3367017RL
Cut Tape3367017
Product RangeSTripFET VI DeepGATE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance2400µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation110W
Operating Temperature Max175°C
Product RangeSTripFET VI DeepGATE
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Product Range
STripFET VI DeepGATE
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035