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SCT4062KWATL
Silicon Carbide MOSFET, Single, N Channel, 24 A, 1.2 kV, 0.081 ohm, TO-263
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ManufacturerROHM
Manufacturer Part NoSCT4062KWATL
Order Code
Re-Reel4365769RL
Cut Tape4365769
Your Part Number
90 In Stock
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90 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY82.080 | CNY82.08 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY82.080 (CNY92.7504) |
| 5+ | CNY70.970 (CNY80.1961) |
| 10+ | CNY59.860 (CNY67.6418) |
| 50+ | CNY53.960 (CNY60.9748) |
| 100+ | CNY48.050 (CNY54.2965) |
| 250+ | CNY47.090 (CNY53.2117) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoSCT4062KWATL
Order Code
Re-Reel4365769RL
Cut Tape4365769
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.081ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.8V
Power Dissipation93W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
SCT4062KWATL is a Trench-structure, Silicon-carbide (SiC) MOSFET. It has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. Typical applications include solar inverters, DC/DC converters, switch-mode power supplies, induction heating, and motor drives.
- Low on-resistance, fast switching speed
- Fast reverse recovery, easy to parallel, simple to drive
- Wide creepage distance = min 4.7mm
- Drain - source breakdown voltage is 1200V min at VGS = 0V, ID = 5.3mA, Tvj = 25°C
- Zero gate voltage drain current is 10μA typ at Tvj = 150°C
- Gate threshold voltage is 4.8V max at VDS = 10V, ID = 6.45mA
- Static drain - source on - state resistance is 62mohm typ at Tvj = 25°C
- Gate input resistance is 4ohm typ at f = 1MHz, open drain
- Range of storage temperature: -40 to +175°C
- TO-263 package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.081ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
93W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01