Print Page
NTZD3154NT1G
Dual MOSFET, N Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTZD3154NT1GCopy
Order Code
Full Reel2442271
Re-Reel2533209RL
Cut Tape2533209
Your Part Number
85,347 In Stock
72,000 more incoming. You can reserve stock now
2 Delivery in 3-4 Business Days(SG stock)
85,345 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.710 | CNY13.55 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.710 (CNY3.0623) |
| 50+ | CNY1.720 (CNY1.9436) |
| 250+ | CNY1.090 (CNY1.2317) |
| 1000+ | CNY0.942 (CNY1.0645) |
| 2000+ | CNY0.831 (CNY0.939) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 4000+ | CNY0.527 (CNY0.5955) |
| 12000+ | CNY0.517 (CNY0.5842) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3154NT1GCopy
Order Code
Full Reel2442271
Re-Reel2533209RL
Cut Tape2533209
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel540mA
Drain Source On State Resistance N Channel0.4ohm
Drain Source On State Resistance P Channel0.4ohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications.
- Low RDS (ON) improving system efficiency
- Low threshold voltage
- Small footprint
- ESD protected gate
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
540mA
Drain Source On State Resistance P Channel
0.4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
540mA
Drain Source On State Resistance N Channel
0.4ohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454