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FQT7N10LTF
Power MOSFET, N Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQT7N10LTFCopy
Order Code
Re-Reel2101412RL
Cut Tape2101412
Your Part Number
712 In Stock
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712 Delivery in 5-6 Business Days(US stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY8.390 | CNY8.39 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY8.390 (CNY9.4807) |
| 10+ | CNY5.960 (CNY6.7348) |
| 100+ | CNY4.190 (CNY4.7347) |
| 500+ | CNY3.520 (CNY3.9776) |
| 1000+ | CNY2.080 (CNY2.3504) |
| 5000+ | CNY2.040 (CNY2.3052) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT7N10LTFCopy
Order Code
Re-Reel2101412RL
Cut Tape2101412
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.35ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Product Overview
The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 5.8nC typical low gate charge
- 10pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.7A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000211