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FQB34N20LTM.
Power MOSFET, N Channel, 200 V, 31 A, 0.075 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFQB34N20LTM.Copy
Order Code
Re-Reel1495278RL
Cut Tape1495278
Your Part Number
No Longer Stocked
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB34N20LTM.Copy
Order Code
Re-Reel1495278RL
Cut Tape1495278
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id31A
Drain Source On State Resistance0.075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation180W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FQB34N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low level gate drive requirement allowing direct operation from logic drivers
- 100% avalanche tested
- 55nC typical low gate charge
- 52pF typical low Crss
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
2Pins
Product Range
-
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143