Print Page
FDV301N
Power MOSFET, N Channel, 25 V, 220 mA, 4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDV301NCopy
Order Code
Full Reel2336830
Re-Reel9845011RL
Cut Tape9845011
Your Part Number
381,532 In Stock
108,000 more incoming. You can reserve stock now
23,692 Next business day delivery available(Shanghai stock)
1,540 Delivery in 3-4 Business Days(SG stock)
356,300 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.010 | CNY5.05 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.010 (CNY1.1413) |
| 50+ | CNY0.820 (CNY0.9266) |
| 100+ | CNY0.629 (CNY0.7108) |
| 500+ | CNY0.364 (CNY0.4113) |
| 1500+ | CNY0.357 (CNY0.4034) |
| 3000+ | CNY0.340 (CNY0.3842) |
| 7500+ | CNY0.322 (CNY0.3639) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.278 (CNY0.3141) |
| 9000+ | CNY0.231 (CNY0.261) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV301NCopy
Order Code
Full Reel2336830
Re-Reel9845011RL
Cut Tape9845011
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id220mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.06V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
- Drain to source voltage (Vds) of 25V
- Gate to source voltage of 8V
- Continuous drain current (Id) of 220mA
- Power dissipation (Pd) of 350mW
- Low on state resistance of 3.1ohm at Vgs 4.5V
- Operating temperature range -55°C to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
220mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.06V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for FDV301N
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033