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FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDC6561AN
Order Code
Full Reel2323165
Re-Reel9844813RL
Cut Tape9844813
Your Part Number
102,738 In Stock
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99989 Delivery in 5-6 Business Days(UK stock)
2749 Delivery in 5-6 Business Days(US stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.320 | CNY21.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.320 (CNY4.8816) |
| 50+ | CNY3.460 (CNY3.9098) |
| 100+ | CNY2.600 (CNY2.938) |
| 500+ | CNY1.980 (CNY2.2374) |
| 1500+ | CNY1.950 (CNY2.2035) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY1.640 (CNY1.8532) |
| 9000+ | CNY1.610 (CNY1.8193) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561AN
Order Code
Full Reel2323165
Re-Reel9844813RL
Cut Tape9844813
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC6561AN
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043