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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6321C
Order Code
Re-Reel9844848RL
Cut Tape9844848
Your Part Number
20,653 In Stock
12,000 more incoming. You can reserve stock now
10230 Delivery in 3-4 Business Days(SG stock)
10423 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.190 | CNY20.95 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.190 (CNY4.7347) |
| 50+ | CNY3.460 (CNY3.9098) |
| 100+ | CNY2.730 (CNY3.0849) |
| 500+ | CNY1.890 (CNY2.1357) |
| 1500+ | CNY1.860 (CNY2.1018) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6321C
Order Code
Re-Reel9844848RL
Cut Tape9844848
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Drain Source On State Resistance N Channel0.45ohm
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
900mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
0.45ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000113