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BD13916S
Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD13916S
Order Code2453335
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current1.5A
Power Dissipation1.25W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (19-Jan-2021)
Alternatives for BD13916S
3 Products Found
Product Overview
The BD13916S is a NPN Epitaxial Silicon Transistor suitable for medium power linear and switching applications. The bipolar transistor complement to BD138 PNP transistor.
- -55 to 150°C Operating temperature range
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
1.25W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000761