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BC847CDW1T1G
Bipolar Transistor Array, General Purpose, Dual NPN, 45 V, 100 mA, 380 mW
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBC847CDW1T1G
Order Code
Re-Reel2464066RL
Cut Tape2464066
Your Part Number
3,098 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.839 | CNY4.20 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.839 (CNY0.9481) |
| 50+ | CNY0.679 (CNY0.7673) |
| 100+ | CNY0.519 (CNY0.5865) |
| 500+ | CNY0.329 (CNY0.3718) |
| 1500+ | CNY0.323 (CNY0.365) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC847CDW1T1G
Order Code
Re-Reel2464066RL
Cut Tape2464066
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN45V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN100mA
Continuous Collector Current PNP-
Power Dissipation NPN380mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN270hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Transition Frequency PNP-
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BC847CDW1T1G is a dual NPN general purpose Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- AECQ101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max NPN
45V
Continuous Collector Current NPN
100mA
Power Dissipation NPN
380mW
DC Current Gain hFE Min NPN
270hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
100MHz
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536