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NVMFS5C638NLT1G
Power MOSFET, N Channel, 60 V, 133 A, 0.003 ohm, DFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVMFS5C638NLT1GCopy
Manufacturer Standard Lead Time59 weeks
Order Code
Re-Reel2895722RL
Cut Tape2895722
Your Part Number
1,406 In Stock
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1,406 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY25.520 | CNY25.52 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.520 (CNY28.8376) |
| 10+ | CNY16.610 (CNY18.7693) |
| 100+ | CNY11.510 (CNY13.0063) |
| 500+ | CNY9.380 (CNY10.5994) |
| 1000+ | CNY8.540 (CNY9.6502) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS5C638NLT1GCopy
Manufacturer Standard Lead Time59 weeks
Order Code
Re-Reel2895722RL
Cut Tape2895722
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id133A
Drain Source On State Resistance0.003ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation100W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
NVMFS5C638NLT1G is an N-channel, power, single MOSFET.
- Small footprint (5x6mm) for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- AEC−Q101 qualified and PPAP capable
- Drain−to−source breakdown voltage is 60V min at VGS = 0V, ID = 250µA
- Drain−to−source breakdown voltage temperature coefficient is 26mV/°C typ
- Drain−to−source on resistance is 2.6mohm typ at VGS = 10V, ID = 50A
- Forward diode voltage is 0.84V typ at VGS = 0V, IS = 50A, TJ = 25°C
- DFN5 package
- Operating junction and storage temperature range from -55 to + 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
133A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001