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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE210G
Order Code2535635
Product RangeMJxxxx
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current5A
Power Dissipation15W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency65MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product RangeMJxxxx
Qualification-
SVHCLead (23-Jan-2024)
Product Overview
The MJE210G is a PNP complementary silicon Power Transistor designed for low voltage, low-power and high-gain audio amplifier applications. The device offers high DC current gain and low collector to emitter saturation voltage.
- High current-gain-bandwidth product
- Annular construction for low leakage
- 40VDC Collector-emitter voltage
- 25VDC Collector-base voltage
- 8VDC Emitter-base voltage
- 5A Continuous collector current
Applications
Industrial, Audio, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
5A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
MJxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
15W
Transistor Mounting
Through Hole
Transition Frequency
65MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068