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FQB19N20LTM
Power MOSFET, N Channel, 200 V, 21 A, 0.14 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQB19N20LTM
Order Code
Re-Reel2453431RL
Cut Tape2453431
Your Part Number
987 In Stock
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987 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY18.430 | CNY18.43 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY18.430 (CNY20.8259) |
| 10+ | CNY11.890 (CNY13.4357) |
| 100+ | CNY8.090 (CNY9.1417) |
| 500+ | CNY5.930 (CNY6.7009) |
| 1000+ | CNY5.820 (CNY6.5766) |
| 5000+ | CNY5.700 (CNY6.441) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB19N20LTM
Order Code
Re-Reel2453431RL
Cut Tape2453431
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id21A
Drain Source On State Resistance0.14ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation3.13W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FQB19N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 31nC typical low gate charge
- 30pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
3.13W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.14ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312