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FDC6333C..
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.095 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6333C..Copy
Order Code
Full Reel2985375
Re-Reel1700671RL
Cut Tape1700671
Your Part Number
5,754 In Stock
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15 Delivery in 3-4 Business Days(SG stock)
5,739 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.290 | CNY21.45 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.290 (CNY4.8477) |
| 50+ | CNY3.570 (CNY4.0341) |
| 100+ | CNY2.850 (CNY3.2205) |
| 500+ | CNY2.140 (CNY2.4182) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY1.910 (CNY2.1583) |
| 9000+ | CNY1.880 (CNY2.1244) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6333C..Copy
Order Code
Full Reel2985375
Re-Reel1700671RL
Cut Tape1700671
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.095ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
- Low gate charge
- Small footprint
- Low profile
- High performance Trench technology for extremely low RDS (ON)
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.095ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002