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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5886G
Order Code9556087
Product Range2NXXXX
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current25A
Power Dissipation200W
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency4MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max200°C
Product Range2NXXXX
Qualification-
MSL-
Alternatives for 2N5886G
1 Product Found
Product Overview
The 2N5886G is a 25A NPN high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
- Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
- Low leakage current (1mA DC maximum ICEX @ rated voltage)
- Excellent DC current gain (20 minimum hFE @ 10A DC IC)
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
25A
Transistor Case Style
TO-204AA
No. of Pins
2Pins
DC Current Gain hFE Min
4hFE
Product Range
2NXXXX
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
200°C
Qualification
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012021