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PSMN1R4-40YLDX
Power MOSFET, N Channel, 40 V, 100 A, 1120 µohm, SOT-669, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R4-40YLDXCopy
Order Code
Re-Reel2449091RL
Cut Tape2449091
Your Part Number
2,920 In Stock
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2,920 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY22.250 | CNY22.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY22.250 (CNY25.1425) |
| 10+ | CNY14.250 (CNY16.1025) |
| 50+ | CNY11.960 (CNY13.5148) |
| 200+ | CNY9.660 (CNY10.9158) |
| 500+ | CNY7.690 (CNY8.6897) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R4-40YLDXCopy
Order Code
Re-Reel2449091RL
Cut Tape2449091
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance1120µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation238W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R4-40YLD is a N-channel enhancement-mode logic level gate drive MOSFET using advanced TrenchMOS® Superjunction technology. It is designed and qualified for high performance power switching applications.
- NextPower-S3 technology delivers superfast switching with soft recovery
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-plus body-diode, gives soft switching without the associated high IDSS leakage
- Optimised for 4.5V gate drive utilising NextPower-S3 Superjunction technology
- High reliability LFPAK package, copper-clip, solder die attach and qualified to 175°C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
- Low parasitic inductance and resistance
- -55 to 175°C Junction temperature range
Applications
Power Management, Motor Drive & Control, Industrial, Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
238W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1120µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000157