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PMV280ENEAR
Power MOSFET, N Channel, 100 V, 1.1 A, 0.285 ohm, TO-236AB, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPMV280ENEAR
Order Code
Full Reel4319467
Re-Reel2777604RL
Cut Tape2777604
Your Part Number
Available to Order
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.960 | CNY24.80 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.960 (CNY5.6048) |
| 50+ | CNY2.880 (CNY3.2544) |
| 100+ | CNY2.250 (CNY2.5425) |
| 500+ | CNY1.600 (CNY1.808) |
| 1500+ | CNY1.400 (CNY1.582) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.852 (CNY0.9628) |
| 9000+ | CNY0.835 (CNY0.9436) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV280ENEAR
Order Code
Full Reel4319467
Re-Reel2777604RL
Cut Tape2777604
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.285ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation580mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMV280ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Logic level compatible, AEC-Q101 qualified
- ElectroStatic Discharge (ESD) protection > 2kV HBM (class H2)
- Drain-source breakdown voltage is 100V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 1.7V typ at ID = 250µA; VDS=VGS; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 100V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 285mohm typ at VGS = 10V; ID = 1.1A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
- Gate resistance is 1.8ohm typ at f = 1MHz
- Ambient temperature range from -55°C to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.1A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
580mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.285ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000002