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PMV164ENEAR
Power MOSFET, N Channel, 60 V, 1.6 A, 0.218 ohm, TO-236AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMV164ENEARCopy
Manufacturer Standard Lead Time67 weeks
Order Code
Re-Reel3132378RL
Cut Tape3132378
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY5.760 | CNY28.80 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.760 (CNY6.5088) |
| 50+ | CNY3.650 (CNY4.1245) |
| 100+ | CNY2.520 (CNY2.8476) |
| 500+ | CNY1.580 (CNY1.7854) |
| 1500+ | CNY1.400 (CNY1.582) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV164ENEARCopy
Manufacturer Standard Lead Time67 weeks
Order Code
Re-Reel3132378RL
Cut Tape3132378
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.218ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation640mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMV164ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Logic-level compatible
- ElectroStatic Discharge (ESD) protection > 2kV HBM (class H2)
- AEC-Q101 qualified
- Drain-source voltage is 60V max at Tj = 25°C
- Gate-source voltage is 20V maximum
- Drain current is 1.6A max at VGS = 10V; Tamb = 25°C
- Peak drain current is 6.5A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Source current is 1.3A max at Tamb = 25°C
- Total power dissipation is 640mW max at Tamb = 25°C
- Ambient temperature range from -55 to 175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
640mW
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.218ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000002