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BUK9Y14-80E,115
Power MOSFET, N Channel, 80 V, 62 A, 0.0113 ohm, SOT-669, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY18.800 (CNY21.244) |
| 10+ | CNY11.780 (CNY13.3114) |
| 100+ | CNY7.790 (CNY8.8027) |
| 500+ | CNY6.190 (CNY6.9947) |
| 1000+ | CNY5.500 (CNY6.215) |
| 5000+ | CNY5.390 (CNY6.0907) |
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Minimum: 1
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CNY18.80 (CNY21.24 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK9Y14-80E,115
Order Code2319929
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id62A
Drain Source On State Resistance0.0113ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation147W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
BUK9Y14-80E,115 is a logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified for the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V, 24V and 48V automotive systems, motors, lamps and solenoid control, transmission control, ultra high performance power switching.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True logic level gate with VGS(th) rating of greater than 0.5V at 175°C
- Drain-source breakdown voltage is 80V min at ID = 250µA; VGS = 0V, Tj=25°C
- Drain leakage current is 0.25µA typ at VDS=80V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 12.2mohm typ at VGS = 5V; ID = 15A; Tj = 25°C
- Gate-drain charge is 8.7nC typical at ID = 15A; VDS = 64V; VGS = 5V;Tj = 25°C
- Rise time is 24.6ns typ at VDS = 60V, RL = 4ohm; VGS = 5V;RG(ext) = 5ohm; Tj = 25°C
- Fall time is 24.7ns typ at VDS = 60V, RL = 4ohm; VGS = 5V;RG(ext) = 5ohm; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 15A; VGS = 0V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
62A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
147W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0113ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454