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BST82,215
Power MOSFET, N Channel, 100 V, 190 mA, 10 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBST82,215
Order Code
Full Reel2439451
Re-Reel1081313RL
Cut Tape1081313
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.340 | CNY31.70 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.340 (CNY7.1642) |
| 50+ | CNY3.500 (CNY3.955) |
| 100+ | CNY2.660 (CNY3.0058) |
| 500+ | CNY1.920 (CNY2.1696) |
| 1500+ | CNY1.610 (CNY1.8193) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY1.160 (CNY1.3108) |
| 9000+ | CNY1.140 (CNY1.2882) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBST82,215
Order Code
Full Reel2439451
Re-Reel1081313RL
Cut Tape1081313
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id190mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BST82,215 is a N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Typical applications include relay driver, high-speed line driver, logic level translator.
- Very fast switching, logic level compatible
- Subminiature surface mount package
- Drain-source breakdown voltage is 130V typ at Tj=25°C, ID=10µA; VGS =0V
- Drain-source leakage current is 0.01µA typ at Tj=25°C, VDS=60V; VGS =0V
- Gate-source leakage current is 10nA typ at VGS=±20V; VDS =0V
- Forward transconductance is 350mS min at VDS=5V; ID=175mA
- Source-drain (diode forward) voltage is 1.5V typ at IS=300mA; VGS=0V
- Reverse recovery time is 30ns min at IS=300mA
- SOT23 package
- Operating junction temperature range from -65 to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
190mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145