Print Page
LND150K1-G
Power MOSFET, N Channel, 500 V, 13 mA, 1000 ohm, TO-236AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICROCHIP
Manufacturer Part NoLND150K1-G
Order Code
Re-Reel2450520RL
Cut Tape2450520
Your Part Number
4,444 In Stock
Need more?
4444 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY3.930 | CNY3.93 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY3.930 (CNY4.4409) |
| 25+ | CNY3.310 (CNY3.7403) |
| 100+ | CNY2.910 (CNY3.2883) |
| 3000+ | CNY2.860 (CNY3.2318) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICROCHIP
Manufacturer Part NoLND150K1-G
Order Code
Re-Reel2450520RL
Cut Tape2450520
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id13mA
Drain Source On State Resistance1000ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The LND150K1-G is a N-channel depletion-mode DMOS FET utilizing Supertex's lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
13mA
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
0V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1000ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006