Print Page
IXTP1R6N50D2.
MOSFET, N-CH, 500V, 1.6A, TO-220
Image is for illustrative purposes only. Please refer to product description.
180 In Stock
Need more?
180 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY43.630 (CNY49.3019) |
| 10+ | CNY28.640 (CNY32.3632) |
| 100+ | CNY21.020 (CNY23.7526) |
| 500+ | CNY17.600 (CNY19.888) |
| 1000+ | CNY16.530 (CNY18.6789) |
Price for:Each
Minimum: 1
Multiple: 1
CNY43.63 (CNY49.30 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP1R6N50D2.Copy
Order Code3949101
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id1.6A
Drain Source On State Resistance2.3ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max-
Power Dissipation100W
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
2.3ohm
Transistor Mounting
Through Hole
Power Dissipation
100W
Qualification
-
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-220
Gate Source Threshold Voltage Max
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:0
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002812