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IRLML2803TRPBF
Power MOSFET, N Channel, 30 V, 850 mA, 0.25 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLML2803TRPBF
Order Code
Full Reel4335719
Re-Reel9102701RL
Cut Tape9102701
Also Known AsSP001572964
Your Part Number
234,192 In Stock
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11109 Next business day delivery available(Shanghai stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.320 | CNY11.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.320 (CNY2.6216) |
| 50+ | CNY1.470 (CNY1.6611) |
| 250+ | CNY1.090 (CNY1.2317) |
| 1000+ | CNY0.972 (CNY1.0984) |
| 3000+ | CNY0.752 (CNY0.8498) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 6000+ | CNY0.478 (CNY0.5401) |
| 18000+ | CNY0.469 (CNY0.530) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML2803TRPBF
Order Code
Full Reel4335719
Re-Reel9102701RL
Cut Tape9102701
Also Known AsSP001572964
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id850mA
Drain Source On State Resistance0.25ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Low profile (<lt/>1.1mm)
- Ultra low on-resistance
- ±20V gate-source voltage
- Halogen-free
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
850mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033