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IRLML2502TRPBF
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRLML2502TRPBF
Order Code
Re-Reel9102981RL
Cut Tape9102981
Also Known AsSP001558336
Your Part Number
Available to Order
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.660 | CNY13.30 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.660 (CNY3.0058) |
| 50+ | CNY1.710 (CNY1.9323) |
| 250+ | CNY1.290 (CNY1.4577) |
| 1000+ | CNY1.160 (CNY1.3108) |
| 3000+ | CNY0.818 (CNY0.9243) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML2502TRPBF
Order Code
Re-Reel9102981RL
Cut Tape9102981
Also Known AsSP001558336
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
Drain Source On State Resistance0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045