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IRFR220NTRPBF
Power MOSFET, N Channel, 200 V, 5 A, 0.6 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR220NTRPBF
Order Code
Re-Reel2468035RL
Cut Tape2468035
Also Known AsSP001577980
Your Part Number
1,656 In Stock
12,000 more incoming. You can reserve stock now
1656 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.900 | CNY34.50 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.900 (CNY7.797) |
| 50+ | CNY5.730 (CNY6.4749) |
| 100+ | CNY4.550 (CNY5.1415) |
| 500+ | CNY3.540 (CNY4.0002) |
| 1000+ | CNY3.210 (CNY3.6273) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR220NTRPBF
Order Code
Re-Reel2468035RL
Cut Tape2468035
Also Known AsSP001577980
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5A
Drain Source On State Resistance0.6ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFR220NTRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00046