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IRF9952TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.08 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF9952TRPBF
Order Code
Re-Reel2468029RL
Cut Tape2468029
Also Known AsSP001555914
Your Part Number
6,270 In Stock
8,000 more incoming. You can reserve stock now
6270 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY5.810 | CNY29.05 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.810 (CNY6.5653) |
| 50+ | CNY3.830 (CNY4.3279) |
| 250+ | CNY2.990 (CNY3.3787) |
| 1000+ | CNY2.960 (CNY3.3448) |
| 2000+ | CNY2.700 (CNY3.051) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9952TRPBF
Order Code
Re-Reel2468029RL
Cut Tape2468029
Also Known AsSP001555914
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel0.08ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- Dual N-and P- channel HEXFET® power MOSFET
- Generation V technology
- Ultra low on-resistance
- Very low gate charge and switching loses
- Fully avalanche rated
- Dynamic dv/dt rating
- Fast switching
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.08ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.08ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536