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IRF7341GTRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 5.1 A, 5.1 A, 0.043 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBFCopy
Order Code
Re-Reel2839483RL
Cut Tape2839483
Product RangeHEXFET Series
Also Known AsIRF7341GTRPBF, SP001563394
Your Part Number
2,499 In Stock
Need more?
2,499 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY11.820 | CNY59.10 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY11.820 (CNY13.3566) |
| 50+ | CNY8.620 (CNY9.7406) |
| 250+ | CNY7.340 (CNY8.2942) |
| 1000+ | CNY6.920 (CNY7.8196) |
| 2000+ | CNY6.820 (CNY7.7066) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBFCopy
Order Code
Re-Reel2839483RL
Cut Tape2839483
Product RangeHEXFET Series
Also Known AsIRF7341GTRPBF, SP001563394
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.7W
Product Range
HEXFET Series
MSL
-
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id N Channel
5.1A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00027