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IRF7103TRPBF
Dual MOSFET, N Channel, 50 V, 50 V, 3 A, 3 A, 0.11 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7103TRPBF
Order Code
Full Reel4293645
Re-Reel2467996RL
Cut Tape2467996
Also Known AsSP001562004
Your Part Number
300,064 In Stock
Need more?
108125 Next business day delivery available(Shanghai stock)
191939 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.350 | CNY21.75 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.350 (CNY4.9155) |
| 50+ | CNY3.040 (CNY3.4352) |
| 250+ | CNY2.460 (CNY2.7798) |
| 1000+ | CNY2.240 (CNY2.5312) |
| 2000+ | CNY2.040 (CNY2.3052) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 4000+ | CNY1.800 (CNY2.034) |
| 12000+ | CNY1.770 (CNY2.0001) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7103TRPBF
Order Code
Full Reel4293645
Re-Reel2467996RL
Cut Tape2467996
Also Known AsSP001562004
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id N Channel3A
Continuous Drain Current Id P Channel3A
Drain Source On State Resistance N Channel0.11ohm
Drain Source On State Resistance P Channel0.11ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for IRF7103TRPBF
2 Products Found
Product Overview
The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id P Channel
3A
Drain Source On State Resistance P Channel
0.11ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
50V
Continuous Drain Current Id N Channel
3A
Drain Source On State Resistance N Channel
0.11ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00031