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ManufacturerINFINEON
Manufacturer Part NoIPB017N06N3GATMA1Copy
Manufacturer Standard Lead Time21 weeks
Order Code1775519
Also Known AsIPB017N06N3 G, SP000434404
Your Part Number
977 In Stock
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977 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY29.480 (CNY33.3124) |
| 10+ | CNY19.280 (CNY21.7864) |
| 100+ | CNY15.080 (CNY17.0404) |
| 500+ | CNY13.110 (CNY14.8143) |
| 1000+ | CNY13.030 (CNY14.7239) |
Price for:Each
Minimum: 1
Multiple: 1
CNY29.48 (CNY33.31 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
- ManufacturerINFINEONManufacturer Part NoIPB017N06N3GATMA1CopyManufacturer Standard Lead Time21 weeksOrder Code1775519Also Known AsIPB017N06N3 G, SP000434404Technical DatasheetChannel TypeN ChannelDrain Source Voltage Vds60VContinuous Drain Current Id180ADrain Source On State Resistance1700µohmTransistor Case StyleTO-263 (D2PAK)Transistor MountingSurface MountRds(on) Test Voltage10VGate Source Threshold Voltage Max3VPower Dissipation250WNo. of Pins7PinsOperating Temperature Max175°CProduct Range-Qualification-SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB017N06N3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Technical Specifications
- Channel Type
N Channel
Continuous Drain Current Id180A
Transistor Case StyleTO-263 (D2PAK)
Rds(on) Test Voltage10V
Power Dissipation250W
Operating Temperature Max175°C
Qualification-
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds60V
Drain Source On State Resistance1700µohm
Transistor MountingSurface Mount
Gate Source Threshold Voltage Max3V
No. of Pins7Pins
Product Range-
MSLMSL 1 - Unlimited
Technical Docs 2
Alternatives for IPB017N06N3GATMA1
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Legislation and Environmental
- Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried outTariff No:85412900US ECCN:EAR99EU ECCN:NLRRoHS Compliant:YesRoHS
RoHS Phthalates Compliant:YesRoHS
SVHC:No SVHC (25-Jun-2025)Download Product Compliance CertificateProduct Compliance Certificate
Weight (kg):.002
