IPB017N06N3GATMA1

Power MOSFET, N Channel, 60 V, 180 A, 1700 µohm, TO-263 (D2PAK), Surface Mount

Image is for illustrative purposes only. Please refer to product description.
INFINEON IPB017N06N3GATMA1 Power MOSFET, N Channel, 60 V, 180 A, 1700 µohm, TO-263 (D2PAK), Surface Mount
ManufacturerINFINEON
Manufacturer Part NoIPB017N06N3GATMA1Copy
Manufacturer Standard Lead Time21 weeks
Order Code1775519
Also Known AsIPB017N06N3 G, SP000434404
Your Part Number
977 In Stock

Need more?

977 Delivery in 5-6 Business Days(UK stock)
QuantityPrice (inc GST)
1+CNY29.480 (CNY33.3124)
10+CNY19.280 (CNY21.7864)
100+CNY15.080 (CNY17.0404)
500+CNY13.110 (CNY14.8143)
1000+CNY13.030 (CNY14.7239)
Price for:Each
Minimum: 1
Multiple: 1
CNY29.48 (CNY33.31 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Product Information

  • ManufacturerINFINEON
    Manufacturer Part NoIPB017N06N3GATMA1Copy
    Manufacturer Standard Lead Time21 weeks
    Order Code1775519
    Also Known AsIPB017N06N3 G, SP000434404
    Technical Datasheet
    Channel TypeN Channel
    Drain Source Voltage Vds60V
    Continuous Drain Current Id180A
    Drain Source On State Resistance1700µohm
    Transistor Case StyleTO-263 (D2PAK)
    Transistor MountingSurface Mount
    Rds(on) Test Voltage10V
    Gate Source Threshold Voltage Max3V
    Power Dissipation250W
    No. of Pins7Pins
    Operating Temperature Max175°C
    Product Range-
    Qualification-
    SVHCNo SVHC (25-Jun-2025)

Product Overview

  • The IPB017N06N3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.

    • Highest system efficiency
    • Less paralleling required
    • Increased power density
    • Very low voltage overshoot
    • Superior thermal resistance

    Applications

    Power Management, Alternative Energy, Motor Drive & Control, Industrial

Technical Specifications

  • Channel Type

    N Channel

    Continuous Drain Current Id

    180A

    Transistor Case Style

    TO-263 (D2PAK)

    Rds(on) Test Voltage

    10V

    Power Dissipation

    250W

    Operating Temperature Max

    175°C

    Qualification

    -

    SVHC

    No SVHC (25-Jun-2025)

    Drain Source Voltage Vds

    60V

    Drain Source On State Resistance

    1700µohm

    Transistor Mounting

    Surface Mount

    Gate Source Threshold Voltage Max

    3V

    No. of Pins

    7Pins

    Product Range

    -

    MSL

    MSL 1 - Unlimited

Technical Docs 2

Alternatives for IPB017N06N3GATMA1

  • 4 Products Found

Legislation and Environmental

  • Country of Origin:
    Country in which last significant manufacturing process was carried outCountry of Origin:
    Malaysia
    Country in which last significant manufacturing process was carried out
    Tariff No:85412900
    US ECCN:EAR99
    EU ECCN:NLR
    RoHS Compliant:Yes

    RoHS

    RoHS Phthalates Compliant:Yes

    RoHS

    SVHC:No SVHC (25-Jun-2025)
    Download Product Compliance Certificate

    Product Compliance Certificate

    Weight (kg):.002