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BSC054N04NSGATMA1
Power MOSFET, N Channel, 40 V, 81 A, 5400 µohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC054N04NSGATMA1
Order Code1775448
Also Known AsBSC054N04NS G , SP000354808
Your Part Number
5,461 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.120 (CNY10.3056) |
| 10+ | CNY5.700 (CNY6.441) |
| 100+ | CNY3.760 (CNY4.2488) |
| 500+ | CNY3.000 (CNY3.390) |
| 1000+ | CNY2.430 (CNY2.7459) |
| 5000+ | CNY2.180 (CNY2.4634) |
Price for:Each
Minimum: 1
Multiple: 1
CNY9.12 (CNY10.31 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC054N04NSGATMA1
Order Code1775448
Also Known AsBSC054N04NS G , SP000354808
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id81A
Drain Source On State Resistance5400µohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC054N04NS G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of industrial applications including fast switching DC-to-DC converter.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Ideal for fast switching applications
- MSL1 rated
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Logic level
- Superior thermal resistance
- 100% Avalanche tested
- Halogen-free, Green device
- Qualified according to JEDEC for target applications
Applications
Power Management, Motor Drive & Control, Consumer Electronics, Computers & Computer Peripherals, Communications & Networking, Portable Devices, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
81A
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
5400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002