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AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Order Code
Re-Reel2803372RL
Cut Tape2803372
Product RangeHEXFET Series
Also Known AsAUIRF7343QTR, SP001517450
Your Part Number
12,360 In Stock
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12360 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY12.710 | CNY12.71 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.710 (CNY14.3623) |
| 10+ | CNY10.540 (CNY11.9102) |
| 100+ | CNY8.900 (CNY10.057) |
| 500+ | CNY8.130 (CNY9.1869) |
| 1000+ | CNY7.600 (CNY8.588) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Order Code
Re-Reel2803372RL
Cut Tape2803372
Product RangeHEXFET Series
Also Known AsAUIRF7343QTR, SP001517450
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
Product Overview
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
4.7A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227