Print Page
AUIRF7313QTR
Dual MOSFET, N Channel, 30 V, 30 V, 6.9 A, 6.9 A, 0.023 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF7313QTR
Order Code
Re-Reel2579949RL
Cut Tape2579949
Product RangeHEXFET Series
Also Known AsSP001519208
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 126 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | CNY17.400 | CNY17.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY17.400 (CNY19.662) |
| 10+ | CNY12.840 (CNY14.5092) |
| 100+ | CNY10.290 (CNY11.6277) |
| 500+ | CNY9.260 (CNY10.4638) |
| 1000+ | CNY8.720 (CNY9.8536) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7313QTR
Order Code
Re-Reel2579949RL
Cut Tape2579949
Product RangeHEXFET Series
Also Known AsSP001519208
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.9A
Continuous Drain Current Id N Channel6.9A
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id P Channel6.9A
Drain Source On State Resistance N Channel0.023ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.023ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd2.4W
Power Dissipation N Channel2.4W
Power Dissipation P Channel2.4W
Operating Temperature Max175°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.9A
Continuous Drain Current Id P Channel
6.9A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2.4W
Power Dissipation P Channel
2.4W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
6.9A
On Resistance Rds(on)
0.023ohm
Drain Source On State Resistance N Channel
0.023ohm
Drain Source On State Resistance P Channel
0.023ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation N Channel
2.4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001