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ZXMP4A16GTA
Power MOSFET, P Channel, 40 V, 6.4 A, 0.06 ohm, SOT-223, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoZXMP4A16GTA
Order Code
Re-Reel7564945RL
Cut Tape7564945
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY11.420 | CNY11.42 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.420 (CNY12.9046) |
| 10+ | CNY7.160 (CNY8.0908) |
| 50+ | CNY4.740 (CNY5.3562) |
| 200+ | CNY4.230 (CNY4.7799) |
| 500+ | CNY3.720 (CNY4.2036) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMP4A16GTA
Order Code
Re-Reel7564945RL
Cut Tape7564945
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id6.4A
Drain Source On State Resistance0.06ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation3.9W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Product Overview
ZXMP4A16GTA is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, backlighting.
- Low input capacitance, low on-resistance
- Fast switching speed
- Drain-source voltage is -40V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is -6.4A at TA=+25°C, VGS=-10V, steady state
- Pulsed drain current is -21A at TA=+25°C
- Static drain-source on-resistance is 60mohm max at VGS = -10V, ID = -3.8A, TA = +25°C
- Gate threshold voltage is -1.0V min at VDS = VGS, ID = -250µA, TA = +25°C
- SOT223 (type DN) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6.4A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012