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ZXMN6A11DN8TA
Dual MOSFET, N Channel, 60 V, 3.2 A, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXMN6A11DN8TACopy
Order Code
Re-Reel1471151RL
Cut Tape1471151
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 48 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY11.130 | CNY11.13 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.130 (CNY12.5769) |
| 10+ | CNY6.960 (CNY7.8648) |
| 100+ | CNY4.570 (CNY5.1641) |
| 500+ | CNY3.580 (CNY4.0454) |
| 1000+ | CNY3.510 (CNY3.9663) |
| 5000+ | CNY3.440 (CNY3.8872) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMN6A11DN8TACopy
Order Code
Re-Reel1471151RL
Cut Tape1471151
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3.2A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The ZXMN6A11DN8TA is a dual N-channel enhancement-mode MOSFET with unique structure combining the benefits of low ON-resistance and fast switching. It is ideal for DC-to-DC converter applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.2A
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074