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ZXM61P03F
Power MOSFET, P Channel, 30 V, 1.1 A, 0.35 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXM61P03F
Order Code
Re-Reel9525300RL
Cut Tape9525300
Your Part Number
1,046 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY3.760 | CNY18.80 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.760 (CNY4.2488) |
| 50+ | CNY2.490 (CNY2.8137) |
| 100+ | CNY1.770 (CNY2.0001) |
| 500+ | CNY1.430 (CNY1.6159) |
| 1500+ | CNY1.220 (CNY1.3786) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXM61P03F
Order Code
Re-Reel9525300RL
Cut Tape9525300
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.35ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
ZXM61P03F is a P-channel enhancement mode MOSFET. It utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage, power management applications. Typical applications include DC - DC converters, power management functions, disconnect switches and motor control.
- Low on-resistance, fast switching speed
- Low gate drive, low threshold
- Drain-source voltage is -30V
- Gate-source voltage is ±20V
- Continuous drain current is -1.1A at TA=+25°C, VGS=-10V
- Drain-source breakdown voltage is -30V min at ID=-250µA, VGS=0V, Tamb = 25°C
- Gate-source threshold voltage is -1.0V min at ID=-250µA, VDS= VGS, Tamb = 25°C
- Static drain-source on-state resistance is 0.35ohm max at VGS=-10V, ID=-0.6A, Tamb = 25°C
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033