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MMBT5401-7-F
Bipolar (BJT) Single Transistor, PNP, 150 V, 600 mA, 310 mW, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoMMBT5401-7-F
Order Code
Full Reel3127559
Re-Reel3127413RL
Cut Tape3127413
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.845 | CNY4.22 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.845 (CNY0.9548) |
| 50+ | CNY0.685 (CNY0.774) |
| 100+ | CNY0.524 (CNY0.5921) |
| 500+ | CNY0.323 (CNY0.365) |
| 1500+ | CNY0.317 (CNY0.3582) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.238 (CNY0.2689) |
| 9000+ | CNY0.234 (CNY0.2644) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoMMBT5401-7-F
Order Code
Full Reel3127559
Re-Reel3127413RL
Cut Tape3127413
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max150V
Continuous Collector Current600mA
Power Dissipation310mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
MMBT5401-7-F is a PNP high-voltage transistor.
- Epitaxial planar die construction
- Complementary NPN type - MMBT5551
- Ideal for low-power amplification and switching
- SOT23 package
- Power dissipation is 310mW at TA = +25°C
- Operating and storage temperature range from -55 to +150°C
- Collector-emitter saturation voltage is -0.2V max at IC = -10mA, IB = -1mA, TA = +25°C
- Current gain-bandwidth product is 300MHz max at VCE = -10V, IC = -10mA, f = 100MHz
- Noise figure is 8.0dB max at VCE = -5V, IC = -200μA, RS = 10 ohm, f = 1kHz
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
60hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
150V
Power Dissipation
310mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000212