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DMT10H010LK3-13
Power MOSFET, N Channel, 100 V, 68.8 A, 6500 µohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H010LK3-13Copy
Order Code
Re-Reel2709548RL
Cut Tape2709548
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 46 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY17.160 | CNY17.16 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY17.160 (CNY19.3908) |
| 10+ | CNY11.430 (CNY12.9159) |
| 100+ | CNY8.050 (CNY9.0965) |
| 500+ | CNY6.390 (CNY7.2207) |
| 1000+ | CNY5.370 (CNY6.0681) |
| 5000+ | CNY4.950 (CNY5.5935) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H010LK3-13Copy
Order Code
Re-Reel2709548RL
Cut Tape2709548
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id68.8A
Drain Source On State Resistance6500µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
DMT10H010LK3-13 is a N-channel enhancement mode MOSFET in a 3 pin TO-252 (DPAK) package. This MOSFET features low on-state resistance (RDS(ON)) and fast switching making it ideal for high-efficiency power management applications. Typical applications include power management functions, DC-DC converters and backlighting.
- Dain-source voltage is 100V
- Gate-source voltage is ±20V
- Pulsed drain current is 275A
- Total power dissipation is 3W
- Low RDS(ON) minimizes power losses
- Low Qg minimizes switching losses
- 100% unclamped inductive switching ensures more reliable and robust end application
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
68.8A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000315