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DMN63D8LW-13
Power MOSFET, N Channel, 30 V, 380 mA, 2.8 ohm, SOT-323, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LW-13
Order Code
Re-Reel3518382RL
Cut Tape3518382
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.280 | CNY6.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.280 (CNY1.4464) |
| 50+ | CNY0.771 (CNY0.8712) |
| 250+ | CNY0.554 (CNY0.626) |
| 1000+ | CNY0.427 (CNY0.4825) |
| 5000+ | CNY0.360 (CNY0.4068) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LW-13
Order Code
Re-Reel3518382RL
Cut Tape3518382
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id380mA
Drain Source On State Resistance2.8ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN63D8LW-13 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include motor controls, power-management functions, and backlighting.
- Low on-resistance, low input capacitance, ESD protected up to 1kV
- Fast switching speed, low input/output leakage
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 380mA at TA = +25°C, VGS = 10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 1.2A at TA = +25°C
- Total power dissipation is 300mW at TA = +25°C
- Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
- SOT323 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
380mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536