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DMN6140L-13
Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMN6140L-13Copy
Order Code
Full Reel3127535
Re-Reel3127346RL
Cut Tape3127346
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.610 | CNY8.05 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.610 (CNY1.8193) |
| 50+ | CNY1.010 (CNY1.1413) |
| 250+ | CNY0.741 (CNY0.8373) |
| 1000+ | CNY0.622 (CNY0.7029) |
| 5000+ | CNY0.539 (CNY0.6091) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 10000+ | CNY0.496 (CNY0.5605) |
| 30000+ | CNY0.446 (CNY0.504) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN6140L-13Copy
Order Code
Full Reel3127535
Re-Reel3127346RL
Cut Tape3127346
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.14ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, and analogue switch.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 1.6A at TA = +25°C, VGS = 10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 10A at TA = +25°C
- Total power dissipation is 0.7W at TA = +25°C
- Maximum continuous body diode forward current is 1.5A at TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.14ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000049