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DMN2004K-7
Power MOSFET, N Channel, 20 V, 630 mA, 0.55 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN2004K-7
Order Code
Re-Reel1713842RL
Cut Tape1713842
Your Part Number
29,447 In Stock
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270 Delivery in 3-4 Business Days(SG stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.890 | CNY9.45 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.890 (CNY2.1357) |
| 50+ | CNY1.550 (CNY1.7515) |
| 100+ | CNY1.200 (CNY1.356) |
| 500+ | CNY0.815 (CNY0.921) |
| 1500+ | CNY0.799 (CNY0.9029) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2004K-7
Order Code
Re-Reel1713842RL
Cut Tape1713842
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id630mA
Drain Source On State Resistance0.55ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The DMN2004K-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- ESD Protected up to 2KV
- Halogen-free, Green device
- Qualified to AEC-Q101 standards for high reliability
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
Applications
Power Management, Aerospace, Defence, Military, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
630mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.55ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008