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DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7
Order Code
Re-Reel2543535RL
Cut Tape2543535
Your Part Number
4,582 In Stock
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140 Next business day delivery available(Shanghai stock)
4442 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.870 | CNY9.35 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.870 (CNY2.1131) |
| 50+ | CNY1.550 (CNY1.7515) |
| 100+ | CNY1.230 (CNY1.3899) |
| 500+ | CNY0.800 (CNY0.904) |
| 1500+ | CNY0.784 (CNY0.8859) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7
Order Code
Re-Reel2543535RL
Cut Tape2543535
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.034ohm
Drain Source On State Resistance P Channel0.034ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel850mW
Power Dissipation P Channel850mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
0.034ohm
No. of Pins
6Pins
Power Dissipation P Channel
850mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
0.034ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
850mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005