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DMG2301L-7
Power MOSFET, P Channel, 20 V, 3 A, 0.12 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG2301L-7Copy
Order Code
Full Reel3127589
Re-Reel3127313RL
Cut Tape3127313
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.450 | CNY7.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.450 (CNY1.6385) |
| 50+ | CNY1.180 (CNY1.3334) |
| 100+ | CNY0.905 (CNY1.0226) |
| 500+ | CNY0.591 (CNY0.6678) |
| 1500+ | CNY0.580 (CNY0.6554) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.497 (CNY0.5616) |
| 9000+ | CNY0.488 (CNY0.5514) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG2301L-7Copy
Order Code
Full Reel3127589
Re-Reel3127313RL
Cut Tape3127313
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters, and motor control.
- Low on-resistance, low input capacitance
- Fast switching speed
- Drain-source voltage is -20V at TA=+25°C
- Gate-source voltage is ±8V at TA=+25°C
- Continuous drain current is -3A at TA=+25°C, steady state, VGS=-4.5V
- Pulsed drain current is -10A at TA=+25°C
- Drain-source diode forward current ( t < 5 sec) is -0.75A at TA=+25°C
- Power dissipation is 1.5W
- SOT23 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536