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DMC25D1UVT-7
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 500 mA, 500 mA, 4 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC25D1UVT-7Copy
Order Code
Re-Reel3944031RL
Cut Tape3944031
Your Part Number
1,390 In Stock
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1,390 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY5.570 | CNY27.85 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.570 (CNY6.2941) |
| 10+ | CNY3.470 (CNY3.9211) |
| 100+ | CNY2.240 (CNY2.5312) |
| 500+ | CNY1.700 (CNY1.921) |
| 1000+ | CNY1.300 (CNY1.469) |
| 5000+ | CNY1.190 (CNY1.3447) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC25D1UVT-7Copy
Order Code
Re-Reel3944031RL
Cut Tape3944031
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id500mA
On Resistance Rds(on)3.8ohm
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel500mA
Drain Source On State Resistance N Channel4ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.055ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max850mV
Power Dissipation Pd1.3W
No. of Pins6Pins
Power Dissipation N Channel1.3W
Power Dissipation P Channel1.3W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
On Resistance Rds(on)
3.8ohm
Continuous Drain Current Id P Channel
500mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.055ohm
Gate Source Threshold Voltage Max
850mV
No. of Pins
6Pins
Power Dissipation P Channel
1.3W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
500mA
Continuous Drain Current Id N Channel
500mA
Drain Source On State Resistance N Channel
4ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
Power Dissipation Pd
1.3W
Power Dissipation N Channel
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001